Reproducible and High-Resolution Analysis on Ultra-Shallow-JunctionCMOSFETs by Scanning Spreading Resistance Microscopy

摘要：

Two-dimensional characterization of ultra-shallow junction CMOSFETs is performed by scanning spreading resistance microscopy (SSRM). Reproducible SSRM images with high spatial resolution are obtained by measuring in vacuum, and the wearing out characteristics of probes are also improved. Halo distribution of ultra-shallow junctions has very limited lateral diffusion and shows variation with decreasing gate length under ~60 nm. Source/drain extension (SDE) depth of ~10 nm is measured reproducibly on different gate length pMOSFETs.

作者: L.Zhang K.Ohuchi K.Adachi K.Ishimaru M.Takayanagi N.Fukushima

作者单位: Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation 1, SoC Research & Development Center, Semiconductor Company, Toshiba Corporation 8 Shinsugita-cho, Isog

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）