Hard X-ray Photoelectron spectroscopy (HX-PES) study on chemical binding states of ultra shallow plasma-doped silicon layer for the application of advanced ULSI devices

摘要：

We took HX-PES measurement (Si 1s) on silicon samples doped by plasma doping (PD) for the first time before and after annealing using either spike RTA or flash lamp anneal (FLA) in Spring-8. After PD, the carrier density of n-Si substrate decreased to intrinsic Si level due to defect induced carrier traps. After annealing, the results revealed that the chemical binding states of the doped samples were well recovered showing high impurity activation.

作者: C.G.Jin E.Ikenaga K.Kobayashi Y.Sasaki K.Okashita H.Tamura H.Ito B.Mizuno T.Okumura M.Kobata J.J.Kim

作者单位: Ultimate Junction Technologies Inc.,3-1-1, Yagumonakamachi, Moriguchi, Osaka, 570-8501, Japan Japan Synchrotron Radiation Research Institute (JASRI/Spring-8), Hyogo, Japan Matsushita Electric (Panasonic), Kadoma, Osaka, Japan

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）