ECV Profiling of Ultra-Shallow Junction Formed by Plasma Doping

摘要：

Electrochemical capacitance-voltage (ECV) technique has been employed in profiling dopant concentration of ultra-shallow p + n junctions formed by plasma doping. The results show that the junction depth determined by ECV is in good agreement with that determined by secondary ion mass spectroscopy. The results also show that ECV is capable of characterizing pn junctions with junction depth down to 10 nm, and dopant concentration up to 10 21 cm -3 with good controllability and repeatability. Its depth resolution can be down to 1 nm.

作者: Hui-Zhen Wu Guo-Ping Ru C.G.Jin B.Mizuno Yu-Long Jiang Xin-Ping Qu Bing-Zong Li

作者单位: Department of Microelectronics, Fudan University, Shanghai 200433, China Ultimate Junction Technologies Inc., 3-1-1, Yagumonakamachi, Moriguchi, Osaka, 570-8501, Japan

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）