Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond

摘要：

As CMOS technologies move into the 90nm node and beyond, nickel (Ni) self-aligned silicide (SALICIDE) is transitioning from R&D into mainstream SC fabrication. In this paper, advantages and challenges of Ni SALICIDE process technology will be reviewed. The extension of Ni SALICIDE technology to fully silicided metal gates (FUSI) will be discussed.

作者: J.P.Lu Y.Obeng D.A.Ramappa D.Corum R.L.Guldi L.S.Robertson X.Liu L.H.Hall Y.Q.Xu B.Y.Lin A.J.Griffin D.S.Miles Jr. F.S.Johnson T.Grider D.Mercer C.Montgomery J.DeLoach D.F.Yue P.J.Chen T.Bonifield S.Crank S.F.Yu F.Mehrad

作者单位: Silicon Technology Development and *Kilby Fab Texas Instruments 13121 TI Boulevard, MS 365 Dallas, TX 75243, USA

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）