Nanoscale Metal Silicides

摘要：

Metal silicide thin films are integral parts of all microelectronics devices. They have been used as ohmic contact, Schottky barrier contact, gate electrode, local interconnect and diffusion barrier. Silicides of nanoscale are named nanosilicides. As the IC industry moves into the nano era, metal silicide contacts are naturally falling into this category. In this paper, we present an overview of the recent progresses on the study of nanoscale silicides.

作者: L.J.Chen W.W.Wu S.Y.Chen H.C.Chen

作者单位: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, China

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）