Thermal Immune NiSi Technology for Nano-scale CMOSFETs

摘要：

In this paper, thermally stable nickel silicide (NiSi) technologies are investigated for nano-scale CMOS technology. Co/TiN Double capping layer is investigated first. Co/TiN double capping is highly efficient in retarding Ni diffusion during high temperature post silicidation annealing by forming CoNiSi ternary layer at the top region of silicide. Then, hydrogen plasma implantation before Ni/Co/TiN deposition is shown to be desirable for nano-scale CMOS technology.

作者: Hi-Deok Lee Soon-Young Oh Yong-Jin Kim Won-Jae Lee In-Shik Han Ihl-Hyun Cho Sung-Bo Hwang Jong-Gun Lee

作者单位: Dept.of Electronics Engineering, Chungnam National University, Yusong, Daejeon, 305-764, Korea R&D center, MagnaChip Semiconductor, Cheongju, Choongbuk, Korea

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）