Tuning of Schottky barrier heights by silicidation induced impurity segregation

摘要：

Schottky barrier height engineering by silicidation induced impurity segregation is demonstrated. The segregation of sulfur at the NiSi/Si interface leads to a gradual decrease of the SBH on n-Si(100) from 0.65eV to 0.07eV, and correspondingly, to an increase of the SBH on p-Si(100). Alternatively, the effective SBH of NiSi is reduced by As and B segregation during silicidation. Using these techniques, SB-MOSFETs were fabricated. The transistors with impurity segregation at source/drain to the silicon channel show significant performance improvements.

作者: Q.T.Zhao M.Zhang J.Knoch S.Mantl

作者单位: Institut für Schichten und Grenzfl(a)chen (ISG1-IT), and Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich, 52425 Jülich, Germany

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）