Integration and Performance of Schottky Junction SOI Devices

摘要：

This paper demonstrates the successful integration of Schottky-Barrier (SB) MOSFETs that feature platinum silicide (PtSi) source/drain and a tungsten midgap gate down to a length of 40 nm. SB-MOSFETs are shown to steadily progress with respect to conventional highly-doped S/D with a current drive (Ion) of 325-425 μA/μm, an off-state current (Ioff) of 14-368 nA/μm at -2V for 100-40 nm physical gate lengths, respectively.

作者: Emmanuel DUBOIS Guilhem LARRIEU

作者单位: Institut d’Electronique, de Microélectronique et de Nanotechnologie, IEMN/ISEN UMR CNRS 8520 Cité Scientifique, BP 60069 59652 Villeneuve d’Ascq Cedex, France

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）