Schottky Source/Drain MOSFETs on SiGe on Insulator with high-K gatedielectric and TaN gate electrode

摘要：

We report thin SGOI (Silicon Germanium on Insulator) with 65％ Ge concentration p- MOSFET (Metal-Oxide-Semiconductor-Field-Effect-Transistor)using Ni-germanosilicide Schottky S/D (source/drain) and HfO2/TaN gate stack integrated with conventional self-aligned top gate process. Unlike high temperature S/D activation needed for conventional transistor, low Ni-germanosilicide S/D formation temperature contributes to the excellent capacitance-voltage characteristic, low gate leakage current and hence, well-behaved transistor performance. In addition, SOI structure suppresses the junction leakage problem, resulting in good agreement between the source current and drain current of the MOSFET.

作者: Fei Gao Rui Li D.Z.Chi S.Balakumar Chih-Hang Tung S.J.Lee

作者单位: Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of S Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of S Institute of Materials Research Engineering, Singapore, 117602 Institute of Microelectronics Engineering, Singapore, 117685

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）