A Study of Nickel Silicide Formed on SOI Substrate with Different Ni/Co Thicknesses for Nano-scale CMOSFET

摘要：

In this paper, a study of Ni silicide formed on SOI substrate that has different Si thickness (Tsi =27, 50 nm) is performed in depth. The dependence of Ni silicide on the thickness of Ni/Co is also characterized. Ni silicide on SOI film exhibits quite different characteristics compared to that on bulk silicon. That is, Ni silicide on SOI showed ‘V shape as a function of deposited Ni/Co thickness while Ni silicide on bulk-Si showed linear dependence. Moreover, sheet resistance showed strong dependence on the SOI film thickness. Conclusively, Ni thickness adjustment is very important as the SOI Si-film thickness becomes thinner for nano-scale CMOS technology.

作者: Soon-Yen Jung Soon-Young Oh Yong-Jin Kim Won-Jae Lee Ying-Ying Zhang Zhun Zhong Hi-Deok Lee

作者单位: Dept.of Electronics Engineering, Chungnam National University, Yusong, Daejeon, Korea

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）