Thermal Stability improvement of Nickel Germanosilicide Utilizing Ni-Ta Alloy and Co/TiN Cappling layer for Nano-scale CMOS Technology
In this paper, highly thermal stable Nickel Germanosilicide utilizing Ni-Ta alloy and Co/TiN capping layer (Ni-Ta/Co/TiN tri-layer) is proposed for high performance strained Si CMOS technology. The proposed Nickel Germanosilicide utilizing Ni-Ta/Co/TiN structure exhibits low temperature silicidation and wide range of Rapid Thermal Process (RTP) process window. Moreover, sheet resistance shows stable characteristics up to 700℃ for 30 min high Temperature annealing and the surface of Ni-Ta/Co/TiN structure is much smoother than that of Ni/Co/TiN structure both after RTP and post-silicidation annealing. Therefore, the thermal immune Nickel Germanosilicide using the Ni-Ta/Co/TiN tri-layer is highly promising for future SiGe based nano-scale CMOS technology.
Yong-Jin Kim Jin-Suk Wang Hi-Deok Lee Soon-Young Oh Won-Jae Lee Ying-Ying Zhang Zhun Zhong Soon-Yen Jung Hee-Hwan Ji Han-Seob Cha Yeong-Cheol Kim
Dept.of Electronics Engineering, Chungnam National University, Yusong, Daejeon, 305-764, Korea R&D center, MagnaChip Semiconductor, Choongbook, Korea Dept.of Materials Eng., Korea University of Technology and Education, Chonan, Chungnam, Korea
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）