Influence of the Annealing Ambient on the Thermal Stability of Ni Silicide for nano-scale CMOSFETs

摘要：

The thermal stability of Ni silicide was evaluated using post-silicidation annealing ambient such O2, N2, and 30 mTorr vacuum. Among the conditions, the thermal stability of NiSi was improved in 30 mTorr vacuum condition due to the maintenance of stable phases after post-silicidation annealing without combining oxygen. Moreover, abnormal oxidation on the As-doped Si was also suppressed in vacuum condition.

作者: Soon-Young Oh Hi-Deok Lee Jin-Suk Wang

作者单位: Dept.of Electronics Engineering, Chungnam National University, 220 Gung-Dong, Yuseong-Gu, Daejeon, 305-764, KOREA

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）