Advanced SOI technologies: advantages and drawbacks
ITRS roadmap requires a reduction of the device dimensions, with an enhancement of its intrinsic performance: both electrostatic behavior improvement and mobility enhancement are required at the same time. The use of SOI substrates can provide a solution for the electrostatic issue. Indeed, in addition to the classical single gate SOI transistors, novel multiple gate devices are fabricated: the increase of the number of gate is a garanty of performance enhancement. Regarding mobility aspects, several unique solutions are under development on SOI in order to boost the transistor drive current. The purpose of this paper is to make a review of all the different transistor architectures available on SOI, as well as all the solutions provided for mobility enhancement.
O.Faynot T.Poiroux F.Andrieu C.Jahan S.Barraud T.Ernst L.Brévard S.Deleonibus
LETI, CEA-Grenoble, 17 rue des martyrs 38054 Grenoble Cedex 09, France
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）