Thermal Stability and Electrical Properties of High-k Gate Dielectric Materials

摘要：

The use of SiO2 thin films as the gate dielectric is quickly reaching a limitation due to the rapid increase in tunneling current and worsened device reliability. A logical alternative is to use a gate insulator with a higher relative dielectric constant (high-k) than silicon dioxide (3.9), thereby spurring tremendous research activities to produce better high-k gate dielectric materials. In this paper, the recent progress made in our laboratory on the high-k materials is described. The various means to improve the thermal stability of high-k materials like Ta2O5, ZrO2, and HfO2 deposited on Si and their electrical properties will be discussed. The characteristics of Al2O3 gate dielectrics on fully-depleted SiGe-on-insulator (SGOI) will also be described.

作者: A.P.Huang Paul K.Chu

作者单位: Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）