Elimination of Floating body Effect and Thermal Instability in a Nano Quasi-SOI MOSFET with π -shaped Semiconductor Layer
In this paper, a new device structure called the quasi-SOI MOSFET with |D -shaped semiconductor conductive layer is proposed and demonstrated. In this structure, the |D -shaped source/drain layer is formed by the block oxide which consists of three separate oxide islands under the source, the drain, and the body regions, respectively. In other words, due to the three separate oxide islands forming two paths from source/drain to substrate, the generated holes and heat can be eliminated from this source/drain-tied scheme, thus, the proposed quasi-SOI structure shows to improve the kink effect and the self-heating problem as compared with that of conventional SOI structures. Moreover, owing to that the block oxide is utilized to restrict the electric field built between body and source/drain region, the ultra-short-channel effect is also diminished. Besides, our structure is based on the bulk wafer, thus, the cost can be cheaper than the SOI wafer.
Jyi-Tsong Lin Yi-Chuen Eng Tai-Yi Lee Kao-Cheng Lin
Dept.of Electrical Engineering, National Sun Yat-Sen University (NSYSU EE) 70 Lien-hai Rd.Kaohsiung 804, Taiwan China
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）