Model Parameters Extraction of SOI MOSFETs
Device model parameters extraction is often performed using commercial software. But the software is usually not efficient for SOI MOSFETs because of their limitation. In this paper, the genetic algorithm is improved through combining with simulated annealing algorithm. The improved algorithm is used to extract model parameters of SOI MOSFETs, which are fabricated by standard 1.2|ìm CMOS/SOI technology developed by Institute of Microelectronics of Chinese Academy of Sciences. The simulation result using this model is in excellent agreement with the experimental result. The precision is improved evidently compared with commercial software. This method requires neither deep understanding of SOI MOSFETs model nor complex computation compared with conventional methods used by commercial software. Comprehensive verification shows that this model is applicable to a very large region of device sizes.
Li Ruizhen Li Duoli Du Huan Hai Chaohe Han Zhengsheng
Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, China
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）