Effect of Si-implantation Induced Nanocrystals on Reducing the Oxide and Interface Traps Densities of PD SOI MOSFET Under Total-dose Irradiation
I-V characteristics of PD (partially-depleted) NMOS transistors with GAA (gate-all-around) structure fabricated on SIMOX which is hardened by silicon ions implantation were discussed under total-dose irradiation of three bias conditions. It is found experimentally that irradiation- induced threshold voltage shift ?Vth and leakage current of hardened transistors was greatly reduced, comparing to control ones. The effect of total dose on the buildup of net positive oxide traps ?Not and interface traps ?Nit are also analyzed using the charge separation method, indicating that hardened transistors have much less ?Not and ?Nit than control ones. The reduction of ?Vth and ?Not are due to the formation of entities in the BOX (buried oxide) that have a large electron capture cross section. PL (photoluminescence) studies on ion-implanted thermal oxides demonstrate that these entities are Si nanocrystals which increases with implantation dose.
Qian Cong Zhang Zhengxuan Zhang Enxia He Wei Yang Hui Zhang Feng Lin Chenglu
National Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）