Current-Voltage Characteristics and Charge-Carrier Traps in N-Type 4H-SiC Schottky Structures
Because of their high switching speeds and low power losses, metal-SiC Schottky-barrier diodes (SBD) are important to high performance, high temperature, and high frequency applications in power electronics. The use of 4H-SiC in SBDs is particularly advantageous because it has higher electron mobility than other SiC polytypes. In this work we examine current-capacitance-voltage- temperature properties of Ti on 4H-SiC SBDs and develop fitting algorithms to extract diode parameters based on inhomogeneous barrier height analysis approaches. Also the quality of 4H-SiC is evaluated in terms of electrically active defects: this part of the work utilizes Fourier-transform deep level transient spectroscopy (FT-DLTS) to probe carrier traps. FT-DLTS reveals the presence of an electron trap located in energy at ~ 0.6 eV below the conduction band edge. This electron trap possesses a large capture cross section for electrons of the order of 10 -12 cm 2 which suggests that the electron capture is Coulombic and the associated charge transition in the defect is between positive and neutral states.
K.Sarpatwari L.J.Passmore S.A.Suliman O.O.Awadelkarim
Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park,
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）