On the Surface Sulfidation of AlGaN/GaN Schottky Contacts

摘要：

Non-sulfur-treated, (NH4)2S-treated, and P2S5/(NH4)2S-treated AlGaN/GaN Schottky contacts are prepared and characterized. The variations in their Schottky barrier height and leakage current are studied. Then an ultra violet light (UV) exposition is also made during some of the sulfidation processes from which a speeding degradation phenomenon is found and reported.

作者: L.B.Chang N.C.Chen C.H.Chang

作者单位: Department of Electronic Engineering, Chang-Gung University # 259 Winwha 1st Road, Kweishan 333, Tao Department of Electrical Engineering, Chung-Cheng Institute of Technology

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）