Effect of Rapid Thermal Annealing on Ti/Al/Ni/Au Ohmic Contact to n-Al0.45Ga0.55N

摘要：

The rapid thermal annealing effects on Ti/Al/Ni/Au Ohmic contact to n-Al0.45Ga0.55N are investigated by current-voltage (I-V) measurements and transmission line model (TLM). Experiment results indicated that with high Al fraction, it is easy to form ohmic contact to n-AlGaN. Our experiments show that the specific contact resistance (|? c ) depends on annealing temperature and time. The minimum of |? c is obtained as 2.75?á10 -4 ?cm 2 at 550 0 C for 1 minute. Scanning Electron Microscopy ( SEM ) studys showed that the surface morphology of the contact metal annealed at 550 0 C for 1 minute became somewhat degraded compared with that of other conditions.

作者: Jun Chen Xue Li Xiangyang Li

作者单位: State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai, 200083, People’s Republic of China

会议类型: 国际会议

会议名称: The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)

会议地点: 上海

会议语种:英文

在线出版日期: 2006-05-15（万方平台首次上网日期，不代表论文的发表时间）