Spin-polarized injection through the n-magnetic/p-nonmagnetic semiconductor heterojunction
In this paper, the spin-polarized injection through n-magnetic/p-nonmagnetic semiconductor heterojunction was investigated theoretically. Based on the drift-diffusion theory and continuity equation, a model was established to explain the spin-polarized injection through the magnetic heterojunction. Boundary conditions were determined by analyzing the relations of the quasi-chemical potentials in n and p regions. The distributions of the charge density, spin density and spin-polarization were calculated using this model. The results demonstrate that an effective spin-polarized electric injection through the heterojunction may be achieved without external spin injection or the application of a large bias. The factors affecting the nonequilibrium spin-polarization (NESP) in the nonmagnetic region were also given based on the simulation results.
Lei Zhang Ning Deng Min Ren Hao Dong Peiyi Chen
Institute of Microelectronics, Tsinghua University, Beijing 10084 P.R.China
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）