Fabrication and Performance of GaAs Double Camel-Like Gate FET with Extremely High Gate Turn-on Voltage
Extremely high potential barrier height and gate turn-on voltage of a novel GaAs field-effect transistor with n + /p + /n + /p + /n double camel-like gate structure are demonstrated. The maximum electric field and potential barrier height of the double camel-like gate are substantially enhanced by the addition of another n + /p + layers in gate region, as compared with the conventional n + /p + /n single camel-like gate. For a 1 x 100μm2 device, a potential barrier height up to 2.741 V is obtained. Experimentally, a high gate turn-on voltage up to + 4.9 V is achieved because two reverse-biased junctions of the double camel-like gate absorb part of positive gate voltage. In addition, the transistor action shows a maximum saturation current of 730 mA/mm and an extrinsic transconductance of 166 mS/mm.
Jung-Hui Tsai Yu-Chi Kang Tzu-Yen Weng I-Hsuan Hsu
Department of Physics, National Kaohsiung Normal University 116, Ho-ping 1st Road, Kaohsiung, TAIWAN, China
国际会议
The Sixth International Workshop on Junction Technology(第六届国际结技术研讨会)
上海
英文
2006-05-15（万方平台首次上网日期，不代表论文的发表时间）