On the Tunability of Photoemission and Photoabsorption Energy of Nanosilicon
Structural miniaturization provides us with a new freedom that is indeed fascinating. The new freedom of size not only allows us to tune the physical and chemical properties of a specimen by simply adjusting the shape and size but also enables us to gain information that is beyond the scope of conventional approaches. Here we show that a recent bond order-lengthstrength (BOLS) correlation could reconcile the size effect on nanosolid silicon with elucidation of information such as the single energy level of an isolated Si atom, the frequency of Si-Si dimer vibration, the upper limit of photoabsorption/ emission, and dielectric suppression.
Photoemission Photoabsorption Porous Silicon Dielectrics Acoustic Phonons and Optical Pbonons
Chang Q. Sun Likun Pan
School of Electrical and Electronic Engineering, Nanyang Technological University Singapore 639798 Engineering Research Center for Nanophotonics and Advanced Instrument,Ministry of Education, East Ch
国际会议
上海
英文
72-75
2007-03-12(万方平台首次上网日期,不代表论文的发表时间)