Low Frequency Noise Measurement and Analysis of Organic Light Emitting Diode
Organic light emitting device (OLED) low frequency voltage and luminance noise were measured and investigated. 1/f Gaussian noise from device bulk materials and an excessive frequency related part of noise related to device interfaces or defects and traps contributed to device voltage noise. The excessive part of noise increase much faster during device stress. This shows that the interface defects and traps related degradation is much faster. Optical noise observation is a direct reflection of polymer intrinsic degradation. A correlation between current noise and dark spot formation is established too. The 1/f noise slope is correlated to the dark spot growth rate and lifetime. A larger 1/f noise slope generally leads to a faster dark spot growth rate and shorter lifetime. The noise measurement can be a powerful tool to predicate device lifetime and degradation behavior.
Noise OLED Polymer
Ke Lin Jin Chua Soo
Institute of Materials Research and Engineering,3 Research Link, Singapore 117602 Institute of Materials Research and Engineering,3 Research Link, Singapore 117602;Center of Optoelec
国际会议
上海
英文
154-158
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）