Inverted Top-emitting OLEDs with a n-type Si as Cathode
We report a significant enhancement of the electron injection by inserting a 1 -nm-thick Ba electron injection layer between n-Si cathode and iris (8-hydroxyquinoline) aluminum (Alq3) in inverted top-emitting OLEDs. The turn-on voltages of the OLEDs decreased dramatically from 20 V to 9 V and the efficiencies were significantly enhanced by a factor of 13 with Ba electron injection layer, which played a role in reducing the energy barrier for the electron injection, leading to the reduction of the turn-on voltages and the enhancement of the efficiencies of the n-Si based inverted top-emitting OLEDs.
Inverted Top-emitting OLEDs n-Si
Shu-ming Chen Yong-bo Yuan Jia-rong Lian Xiang Zhou
State Key Lab of Optoelectronic Materials and Technologies,Guangdong Province Key Lab of Display Material and Technology,Sun Yat-Sen (Zhongshan) University, Guangzhou 510275, China
国际会议
上海
英文
164-167
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）