Improved Efficiency in OLEDs with a LiF Interlayer in Hole Transport Layer
We demonstrate an improved efficiency in typical Alq3 based bilayer OLEDs with a thin UF interlayer inserted into the hole transport layer (e. g. NPB). This thin LiF interlayer can effectively influence the electrical performance and singnificantly improve electroluminescence (EL) efficiency of the devices. The devices with 2 nm LiF layer at optimal position in NPB exhibit a maximum EL efficiency of 6.3 cd/A, which is 1.5 times higher than that (2.6 cd/A) of the control device without the LiF. Our results show that the LiF interlayer in hole transport layer may be useful for adjusting the hole injection and transport, and improving the hole-electron balance and EL efficiency in OLEDs.
OLEDs Efficiency LiF Interlayer
Jia-rong Lian Yong-bo Yuan Xiang Zhou
State Key Lab of Optoelectronic Materials and Technologies,Guangdong Province Key Lab of Display Material and Technology,Sun Yat-Sen (Zhongshan) University, Guangzhou, 510275, China
国际会议
上海
英文
406-409
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）