The Study of Inorganic Alignment Technique and Rework Process on 65 LCoS RPTV

摘要：

There are evaporating angle, particle contamination and film uniformity issue in the inorganic alignment film manufacturing process. Rework technique of alignment film is the only solution to reuse wafer and ITO glass. Dry etching process is used because of its cheaper, simplicity and no detrimental matter to the environment. We used CHF3 reactive gas in reactive ion etching system. By controlling the etching parameter, inorganic alignment film can be removed on both the wafer and ITO glass. Inorganic deposition can be executed after removing of SiOx alignment film.

关键词： Plasma Etching Inorganic Alignment Layer Rework LCoS

作者: I-chen Huang Jiun-ming Wang Yu-hsien Chen Yu-cheng Lo Huai-an Li

作者单位: Central Research Institute, Chunghwa Picture Tubes,Taoyuan Taiwan, 334, China

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 443-446

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）