Polycrystalline Silicon Thin-film Transistor with Metal-replaced Junctions

摘要：

Polycrystalline silicon thin-film transistor (TFT) with metal-replaced junctions (MERJs) is demonstrated. The TFT is found to exhibit not only reduced parasitic resistance but also improved intrinsic device characteristics. A three-mask MERJ TFT with metallic gate is also demonstrated. The reduced delay on the low-resistance metallic gate line makes the 3mask MERJ TFT technology particularly suitable for realizing large-area active-matrix panels.

关键词： Metal-replaced Junction Polycrystalline Silicon Thin-film Transistor

作者: Man Wong Dongli Zhang Thomas Chow

作者单位: Dept. of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay,Kowloon, Hong Kong, China

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 507-512

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）