Impacts of Nitric Acid Oxidation on Low-temperature Polycrystalline Silicon TFTs with High-k Gate Dielectric

摘要：

In this paper, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with HfO2 gate dielectric and nitric acid oxidation pre-treatment is investigated. Significant improvement on on/off current ratio and field effect mobility is observed due to the nitric acid oxidation pre-treatment. An excellent on/off current ratio and subthreshold swing, as well as low threshold voltage and /off can be achieved without any other hydrogen passivation treatments. These improved performances can be attributed to both the high gate capacitance density using high-k gate dielectric and die good interface quality by nitric acid oxidation of poly-silicon.

关键词： High-k Gate Dielectric HfO2 Nitric Acid Oxidation Thin-Film Transistors (TFTs)

作者: Tsung-Yu Yang Ming-Wen Ma Kuo-Hsing Kao Chun-Jung Su Tien-Sheng Chao Tan-Fu Lei

作者单位: Inst. and Dept. of Electrophysics. National Chiao Tung University,1001 Ta-Hsueh Road Hsinchu, Taiwan Institute of Electronics, National Chiao Tung University,1001 Ta-Hsueh Road Hsinchu, Taiwan 30050, C

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 519-522

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）