Recent Progress of Low Temperature Poly-Si TFT Technology
In this paper, we briefly review the recent progress of key LTPS technologies including laser crystallization, ion doping, and formation of gate insulators. Crystallinity resulting from new lateral growth methods is discussed in detail; the performance of TFTs is strongly influenced by the quality of poly-Si film (e. g. , grain size, intra-grain defects, and surface morphology) . We focus on potential issues of recent lateral growth technology for mass production including anisotropic crystallinity related to laser scanning direction and poor uniformity of intra-grain defect density. Finally, we propose a novel lateral crystal growth technology in which green laser is irradiated to a-Si film with underlying reflective metals as a solution. This method can achieve large and uniform grain structure without anisotropic crystaltinity and poor uniform intra-grain defect density.
LTPS SOP Crystallization
Yoshihiro Morimoto Hanson Liu Fengyi Chen Ryan Lee
R&D Group, TPO Display Corp., No. 12 K Jung Rd., Science-Based Industrial Park, Chu-Nan 350, Miao-Li County, Taiwan, China
国际会议
上海
英文
532-539
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）