An Empirical Model of Leakage Current in Poly-silicon TFTs
Based on an approximate expression for generation rate, an empirical model for poly-Si TFT leakage current is developed in this paper. In this model, the leakage current is composed of two sections: the leakage current induced by vertical electric field in the overlap region and that induced by lateral electric field in the lateral depleted region. The proposed model is analytical without numerical integration, hence attractive for circuit simulation. In addition, it is suitable for poly-Si TFTs either before or after passivation. The model has been verified by a good agreement between simulated results and experimental data.
Poly-Si TFT Modeling Empirical Model Leakage Current
W.J. Wu R.H. Yao Y.F. Hu S.H. Li
Institute of Microelectronics, South China University of Technology,Guangzhou, 510640, China
国际会议
上海
英文
540-544
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）