Dynamic Ni Gettered by PSG from S-MIC Poly-Si and Its TFTs

摘要：

A dynamic PSG gettering method was proposed, in which the Ni gettered out by PSG and Ni induced a-Si to transform crystalline poly-Si are processing simultaneously. The effects of PSG gettering process on the performances of solutionbased metal induced crystallized (S-MIC) poly-Si and thin film transistors made on it were discussed. The farther-crystallization rate was much reduced by the PSG to extract the Ni as a medium source. The boundary between two neighboring domain in S-MIC poly-Si with PSG looks blurrier than that in S-MIC poly-Si without PSG. Compared to the TFTs made on S-MIC poly-Si without PSG gettering, the gate induced leakage current of TFTs made with PSG gettering were decreased and was a little improved.

关键词： Metal Induced Crystallization Polycrystalline Silicon Nickel Gettering Phosphor-Silicate Glass (PSG)

作者: Zhiguo Meng Yang Li Chunya Wu Shuyun Zhao Wong Man Sing Kwok Hoi Shaozhen Xiong

作者单位: Institute of Photo-electronics of Nankai University, The Tianjin Key Laboratory for Photo-electronic Department of electronic and computer engineering, The Hong Kong University of Science and Technolog

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 545-550

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）