Stable Low Temperature Microcrystalline Silicon TFTs to Drive OLEDs

摘要：

Top-gate TFTs are fabricated using microcrystalline silicon films deposited at 165℃. The maximum temperature of 200℃ is reached during the last annealing step of the process. These TFTs exhibit an electron mobility of 5 cm2/V. s, a subthreshold swing of 0.5 and a high stability. Moreover, the off-current is shown to be constant in a large range of the reverse gate voltage. The on-current of 100 μm / 20 μm TFTs is shown to be sufficient to drive large area white OLEDs device.

关键词： Microcrystalline Silicon TFT OLED Low Temperature

作者: K. Kandoussi T. Mohammed-Brahim C. Simon N. Coulon H. Cloarec

作者单位: G.M.-IETR, UMR-CNRS 6164, Universit(e) de Rennes I,35042 Rennes Cedex, France

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 574-578

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）