Reducing the Stress on the Output Transistors of On-panel TFT Gate Drivers
A reliable gate driver circuit which adopts a discharging path in addition to the dual pull-down structure was proposed for (he circuits integrated on thin-film-transistor liquid-crystal display (TFT -LCD) panels. In our study, it was found that it doesnt need to turn on the output transistors all the time while driving the row lines. In our design, the gate voltage was turned back to its normal value by a discharging path after the output voltage had been high enough. Therefore the stress time of the high gate voltage on the output transistors would be reduced. In this study, a 0.35 μm CMOS gate driver was investigated to evaluate the performance of the discharging path. Prominent improvement in suppressing the shift of the threshold voltage was achieved. It is believed that the improvement would be more significant for the TFTs in the on-panel gate drivers. With the discharging path and the dual pull-down structure, it is expected that the reliability of the on-panel gate driver consisting of TFTs would be significantly improved.
Stress Effect Reliability Discharging Path Gate Driver TFT (Thin-film Transistor) LCD (Liquid Crystal Display)
Miin-Shyue Shiau Ming-Yuan Tsao Hong-Chong Wu Ching-Hwa Cheng Don-Gey Liu
Department of Electronic Engineering, Feng Chia University P. O. Box 25-239, Taichung 40724, Taiwan, China
国际会议
上海
英文
583-588
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）