High Mobility Microcrystalline Silicon Thin-film Transistors
Microcrystalline silicon (μc-Si: H) has recently been proven to be a promising material for thin-film transistors (TFTs). We present μc-Si: H TFTs fabricated by plasma-enhanced chemical vapor deposition at temperatures below 200℃ in a condition similar to the fabrication of amorphous silicon TFTs. The μc-Si: H TFTs exhibit device mobilities exceeding 30 cm/2Vs and threshold voltages in the range of 2.5 V. Such high mobilities are observed for long channel devices (50 -200 μm). For short channel device 2 μm, the mobility reduces to 7 cm2/Vs. Furthermore the threshold voltage of the TFTs decreases with decreasing channel length. A simple model is developed, which explains the observed reduction of the device mobility and threshold voltage with decreasing channel length by the influence of drain and source contact resistance.
Thin-film Transistors TFTs Microcrystalline Silicon Large Area Electronics
Kah-Yoong Chan Eerke Bunte Helmut Stiebig Dietmar Knipp
School of Engineering and Science, International University Bremen (Jacobs University Bremen as of s Institute of Photovoltaic, Research Center J(u)lich,52425 J(u)lich, Germany School of Engineering and Science, International University Bremen (Jacobs University Bremen as of s
国际会议
上海
英文
589-594
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）