Negative Differential Resistance and Memory Effects in Organic Diodes
We observed a negative differential resistance (NDR) in organic diodes consisting of organic molecules sandwiched between Ag and ITO electrodes. The large NDR shown in current-voltage characteristics is reproducible, resulting in that the organic devices can be electrically switched between a high conductance state (ON state) and a low conductance state (OFF state), and different negative voltages produce different conductance currents, resulting in the single-level and multilevel memory capability of the devices. It can be found that the currents at both ON to OFF states are space-charge-limited , and attributed to the electron traps at the Ag/organic interface. The large and reproducible NDR makes the devices tremendous potential in low power memory and logic circuits.
Negative Differential Resistance Memory Effects Organic Diode
Jiangshan Chen Jian Lin Dongge Ma
State Key Laboratory of Polymer Physics and Chemistry,Changchun Institute of Applied Chemistry, Chinese Academy of Sciences,Graduate School of Chinese Academy of Sciences Changchun 130022, China
国际会议
上海
英文
606-610
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）