Organic Thin Film Field Effect Transistors with MoO3/Al Electrode and OTS/SiO2 Bilayer Gate Insulator

摘要：

An organic thin-film transistor (OTFTs) having MoO3/Al electrode and OTS/SiO2 bilayer gate insulator configuration between gate insulator and source/drain electrodes is investigated. Thermal SiO2 layer grown is used as the OTFT gate dielectric; Copper phthalocyanine(CuPc) is used as an active layer. We have found that using silane coupling agents-octadecyltrichlorosilane (OTS) to reduce the surface energy of the SiO2 gate dielectric and significantly improve device performance. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio at the same time. The device with MoO3/Al electrode had similar Ids compared to the device with Au electrode at same gate voltage. MoO3/Al was proved to be a superior electrode. Our results indicate mat using double-layer of electrode and double-layer of insulator is an effective way to improve OTFT performance.

关键词： Organic Thin Film Transistor Electrode Bilayer Insulator Mobility

作者: Y. Bai X. Liu L. Chen W. Q. Zhu X. Y. Jiang Zh. L. Zhang

作者单位: Key Laboratory of Advanced Display and System Application, Ministry of Education,Shanghai University, Shanghai 200072, China;Department of Materials Science, Shanghai University,Jiading Campus, Shanghai 201800, China

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 613-616

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）