The Fabrication and Study of ZnO-based Thin Film Transistors
Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO-TF-TS) have been constructed. The ZnO layers were deposited using metal organic chemical vapor deposition (MOCVD)1-3at about 360℃. SiO2 was used as the material of gate insulator to suppress the leakage current effectively and to enable the ZnO-TFT to operate successfully. The drain current on-to-off ratio of ZnO-TFTs fabricated on the substrate of glass is about 104. The average optical transmission of ZnO-TFTs in the visible portion is ～80％. All above shows that it is possible to fabricate a transparent TFT using ZnO as an active channel layer instead of the traditional Si material.
ZnO Transmission Thin Film Transistor MOCVD
X.T. Yang H. Jing C. Wang Y.C. Chang G.T. Du J. L. Cao X.M. Ma H.C. Zhu W. T. Gao H. Jin X.W. Qi B. Gao X.R. Dong G.Z. Fu
Jinlin Institute of Architecture Technology China;Changchun Institute of Optics Fine Mechanics and P Changchun Institute of Optics Fine Mechanics and Physics Jinlin Institute of Architecture Technology China Jilin University, China
国际会议
上海
英文
671-673
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）