Electrical and Optical Characteristics of Ga-doped ZnO Films Deposited on PMMA Substrates

摘要：

Transparent conducting Ga-doped ZnO (GZO) films in thicknesses of 12 to 300 nm were fabricated on unheated polymethyl methacrylate (PMMA) and glass substrates by ion plating deposition using dc arc-discharge. All of the GZO films, which were polycrystalline and showed high transmittance in the visible region, were ZnO crystallites with a wurzite structure highly oriented along the (002) plane. The resistivity of the GZO films decreased from 2 × 10 -3 to 4 × 10 -4 Ωcm with increasing film thickness, and at any given film thickness was approximately the same on both substrates.

关键词： Transparent Conducting Oxides Zinc Oxide Polymethyl Methacrylate Reactive Plasma Deposition

作者: S. Soga S. Kishimoto T. Yamamoto T. Kohno H. Imai M. Yamamoto S. Shirai T. Yamada A. Miyake H. Makino

作者单位: Analysis & Simulation Center, Asahi Kasei Corporation, 2-1 Samejima,Fuji, Shizuoka 416-8501, Japan Materials Design Center, Research Institute, Kochi University of Technology, Tosayamada, Kochi 782-8 R & D, Plastic Products, Asahi Chemicals Corporation,Kawasaki, Kanagawa 210-0863, Japan

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 678-682

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）