The Study of ZnO Film Growth and the Fabrication of ZnO-based Thin Film Transistors

摘要：

The ZnO films were deposited on the substrate of glass by MOCVD 1-3. The X-ray diffraction patterns of samples show sharp diffraction peaks ZnO (002), indicating the films were highly c-axis oriented. The devices based on the ZnO film were fabricated.

关键词： ZnO Thin Film Thin Film Transistor MOCVD

作者: X.M. Ma H. Jing K. Ma Y.C. Chang G. T. Du X.T. Yang H.C. Zhu C. Wang W.T. Gao H. Jin X.W. Qi B. Gao G.Z. Fu

作者单位: Changchun Institute of Optics Fine Mechanics and Physics China Jilin University China Changchun Institute of Optics Fine Mechanics and Physics China;Jinlin Institute of Architecture Tech Jinlin Institute of Architecture Technology China

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 683-684

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）