Novel a-Si: H TFT Vth Compensation Pixel Circuit Employing Negative Bias Annealing

摘要：

A novel pixel design for active matrix organic light emitting diode (AM-OLED) displays employing hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) is proposed. The threshold voltage of a-Si:H TFT is seriously degraded by positive gate bias due to the defect state creation in the channel. But the threshold voltage shifted in positive direction could return by negative bias annealing due to the hole trapping into the gate insulator. The proposed a-Si: H TIT pixel circuit which not only compensates the threshold voltage shift of a-Si: H TFT and OLED, but also suppresses the threshold voltage shift of driving TFT. The simulation results show the proposed pixel circuit compensates successfully threshold voltage shift of devices, and could suppress threshold voltage shift of a-Si: H TFT by employing negative bias annealing.

关键词： AMOLED Amorphous Silicon a-Si:H TFT Thin Film Transistors Threshold Voltage Compensation Pixel Circuit Negative Bias Annealing

作者: Hee-Sun Shin Sang-Myeon Han Hyun-Sang Park Sang-Guen Park Min-Koo Han

作者单位: School of Electrical Engineering and Computer Science,Seoul National University, Seoul, 151 -742, Korea

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 693-697

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）