Solution-based Metal Induced Crystallization of a-Si
A solution-based metal induced crystallization (S-MIC) was studied. Its induced metal source was obtained by metalsalt solution diluted with water or organic solvent. A-Si as the precursor film for S-MIC was deposited by LPCVD or PECVD. We found that the Ni content can be the key factor to control the characteristics of the poly-Si materials. The content was dominated by the solution concentration and dipping time in phase. Large domain S-MIC poly-Si of 30 -40μm was obtained under suitable conditions. The dependent of crystallization rate with annealing time was analyzed. The maximum of electron Hall mobility in S-MIC poly-Si was ～45.6 cm2/V. s. Poly-Si TFT which active layer made by this kind of poly-Si was discussed.
Ni-salt Source Metal Induced Crystallization (MIC) Poly-Si TFT
Chunya Wu Xuedong Li Shuyun Zhao Juan Li Zhiguo Meng Man Wong Hoi Sing Kwok Shaozhen Xiong
Institute of Photo-electronics of Nankai University, The Tianjin Key Laboratory of Photo-electronic Department of electronic and computer engineering, The Hong Kong University of Science and Technolog
国际会议
上海
英文
812-817
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）