The Effects of Adhesion Layer on Electrical Characteristics Performance in Bottom-contact Organic Thin Film Transistors
We demonstrated that organic thin-film-transistors (OTFTs) can be fabricated by using organic gate insulators using a vapor deposition polymerization (VDP) process. The basic material properties of organic thin-film fabricated by VDP method were investigated and organic thin film was adopted as adhesion layer to investigate electrical characteristics. Thinfilm-transistors based on organic semiconductor (OTFTs) have received considerable attention because of their potential application in a variety of industries, since the performance of silicon TFTs can be replaced by OTFTs. For the high-performance OTFTs, it is reported that the grown crystalline characteristics of pentacene are critically correlated with the surface energy for the gate-dielectrics. In this study, instead of polyimide which was well known gate insulators, 6FDA-ODA was used as a polymeric adhesion layer deposited on inorganic gate insulator such as silicon nitride (SiNz), which was formed by vapor deposition polymerization (VDP) instead of spin-coating process. We have investigated the effect of the adhesion layer on the interfacial characteristics between Pentacene and SiNx. And hence, the The electrical characteristics of OTFTs using 6FDA-ODA as an adhesion layer could be compared and analyzed. Also, bottom-contact structure adopting organic thin film fabricated by VDP method was investigated.
Organic Thin-film Transistor (OTFT) Vapor Deposition Polymerization (VDP) Adhesion Layer
Gun Woo Hyung Jun Ho Kim Seo Ji Hyun Seo Ji Hoon Park Il Houng Young Kwan Kim
Department of Materials Science and Engineering,Hongik University, Seoul 121 -791, Korea;Center for Department of Electronic Engineering, Hongik University, Seoul 121 -791, Korea;Center for Organic Ma Department of Information Display, Hongik University, Seoul 121 -791, Korea;Center for Organic Mater
国际会议
上海
英文
849-853
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）