CL and PL Properties of Green-emitting SrGa2S4: Eu Thin Films Prepared by Low Temperature Annealing
Green-emitting strontium thiogallate doped with Eu (SrGa2 S4: Eu) thin film phosphors were prepared by the multisource deposition technique using two electron beam evaporation sources and a thennal annealing at higher than 800℃ or both low temperature annealing and laser annealing using KrF excimer laser in atmosphere of 1 ％ H2S diluted with Ar. The film annealed at 850℃ showed a luminance of around 2.7 × 104cd/m2 under excitation with 5 kV and 60 μA/cm2. Moreover, In this study, preparation of green-emitting SrGa2S4: Eu thin film phosphors by thennal annealing at temperatures lower than 600°was also tried with an assist with a laser annealing technique with 248 nm due to KrF excimer laser. It was shown that the film annealed at 500℃ consisted of SrG2S4 single phase and showed about 2 000 cd/m2 under excitation with 4 kV, 60 μA/cm2. These results indicate that the process of the laser annealing is useful for the realization of FEDs with high performance.
Y. Nakanishi T.Harakawa Y.Arai T.Seino H.Kominami K.Hara
Research Institute of Electronics, Shizuoka University 3-5-1 Johoku, Hamamatsu 432-8011, Japan THE JAPAN STEEL WORKS, LTD, 2-2-1 Fukuura, Kanazawa,Yokohama 236-0004, Japan
国际会议
上海
英文
1023-1026
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）