Dielectric Stacks for TFEL Devices with BaAl2S4: Eu Phosphor Deposited by R. F. Magnetron Sputtering
The successful application of blue-emitting BaAl2S4: Eu thin-film phosphor in full-color TDEL display has unveiled a new era of inorganic electroluminescent display technology. However, many obstacles are yet to be overcome for the development of full-color TFEL display utilizing the BaAl2S4: Eu phosphor. A series of BaAl2S4; Eu TFEL devices with various dielectric stacks were prepared, which were aimed at improving the breakdown field strength and luminance as well as lowering the threshold voltage. The lower dielectric stacks were Ta2O5/ZnS, Ba0.5Sr0.5TiO3/ZnS, Al2O3/Ta2O5/SrTiO3/ZnS and Al2O3/Ta2O5/Al2O3/ZnS, whereas the upper dielectric stacks were ZnS/HfO2/Ta2O5/A12O3 or ZnS/ HfO2/Ta2O5/ZrO2/Al2O3, which were deposited by magnetron sputtering or electron beam evaporation. The BaAl2S4; Eu thin-film phosphors with thickness in the range of 150 - 375 ran were deposited by r. f. magnetron sputtering in H2S and AT atmosphere. The TFEL devices using the above dielectric stacks and phosphors exhibited threshold voltages between 180 and 245 V, and a maximum luminance of 63 cd/m2 at 50 V above the threshold voltage with a CIE color coordinates of x =0.125 and y =0.120 under 200 Hz bipolar pulse drive.
TFEL Device Dielectric Stacks BaAl2S4: Eu Blue Phosphor
Ming-Tong Lin Jun-Hui Lou Tuan-Tuan Zhou Yun-Xia Yang Guo-Rong Chen Hao Huang Tian Xiao
SVA Electron Co. Ltd. , Shanghai 200081, China School of Materials Science and Engineering, East China University of Science and Technology, Shangh SVA Electron Co. Ltd. , Shanghai 200081, China;School of Materials Science and Engineering, East Chi
国际会议
上海
英文
1080-1084
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）