Post-treatment Effect on the Electrical Properties of Triisopropylsilyl Pentacene Organic Thin-film Transistors
By employing a post-treatment in N2 atmosphere at room temperature, the electrical properties of ink-jet printed triisopropylsilyl pentacene organic thin-film transistors (OTFTs) such as current on/off ratio and subthreshold slope were significantly improved. The current on/off ratio of the OTFT device increased from 104 to 105 after die post-treatment and the subthreshold slope was improved from 8.5 V/decade to 2 V/decade, The fleld-effect mobility of the device was not significantly affected by the post-treatment. We have also employed a post-treatment in vacuum at room temperature and the off-current of OTFT devices decreased by 1 order after the treatment.
Organic Thin-film Transistor Triisopropylsilyl Pentacene Ink-jet Printing Post-treatment
Yong-Hoon Kim Jae-Hoon Lee Min-Koo Han Jeong-In Han
Information Display Research Center,Korea Electronics Technology Institute, Seongnam. 463 -816 School of Electrical Engineering and Computer Science,Seoul National University, Seoul, 151 -742, Ko
国际会议
上海
英文
1164-1168
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）