A Physics-based Charge Sheet Model of Polysilicon Thin Film Transistors for Circuit Simulation
A new physical surface-potential-based current model of polysilicon thin-film transistors (poly-Si TFTs) using charge sheet approach suitable for circuit simulation is presented. An extremely accurate and computationally efficient approximation for the poly-Si This surface potential is derived and verifed. The physics-based mobility equations of the model consider the grain boundaries height and mobility degradation caused by phonon scattering and surface roughness scattering. This model based on Brewss charge sheet model and the above non-iterative computation of surface potential also accounts for DIBL effect, kink effect, and channel-length modulation. Comparison between the model results and measured data shows excellent agreement over wide range of operating voltages and for devices with different channel lengths. All the basic equations in our model have an analytic form for implementation in circuit simulators, such as SPICE. And the model exhibits continuity of current expressions which fulfils the requirement of circuit simulators.
Polysilicon Thin-Film Transistors Surface Potential Charge Sheet Model
Wanling Deng Xueren Zheng Rongsheng Chen Weijing Wu
Institute of Microelectronics, South China University of Technology, Guangzhou 510640, China Institute of Microelectronics, South China University of Technology,Guangzhou 510640, China
国际会议
上海
英文
1173-1177
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）