Investigation on μc-Si: H Material and Its TFTs
The Microcrystalline silicon (μc-Si: H) material performances and the obtained TFT have been investigated in this paper. It has been found that the column-like growth model of the μcSi :H may cause the structural and electrical anisotropy of it. The crystalline volume ratio (Xc), grain size and dark conductivity are modulated by the film thickness because of its column-like growth. The parallel conductivity (σ//) and perpendicular conductivity (σ⊥ ) show different changing tendency with the variation of deposition conditions, the latter keeps on 10-5 s/cm -10-6 s/cm. Based on the investigation on the μc-Si:H material characteristics, the appropriate silicon concentration (SC) for the μcSi:H deposition used as the active layer of TFT has been indicated, which should be higher than 2％ , the Xc should be around 40％ - 50％. The resulted μcSi:H TFT shows a good reliability, the degradation ratio of Ion and the Vth shift are less than 25％ and IV respectively. Furthermore, a new recoverable instability phenomenon has also been found.
Microcrystalline Silicon Thin Film Transistor Structural and Electrical Anisotropy Recoverable Instability
Juan Li Yang Li Chunya Wu Zhiguo Meng Shuyun Zhao Shaozhen Xiong Lizhu Zhang
Institute of Photo-electronics, Nankai University, Tianjin, 300071, China Tianjin engineering teachers college, Tianjin, 300131, China
国际会议
上海
英文
1178-1183
2007-03-12（万方平台首次上网日期，不代表论文的发表时间）