Low Threshold Voltage and High Drive Current Poly-Silicon Thin Film Transistors Using Ytterbium Metal Gate and LaAlO3 Dielectric

摘要：

We have demonstrated high-performance metal-gate/high-κ Ytterbium/LaAlO3 low-temperature poly-Si (LTPS) thin film transistors (TFTs) that have both high drive current capability and high voltage operation. The high drive current is due to the combined effect of low work-function Ytterbium metal gate and high gate capacitance by high-κ LaAlO3 dielectric. The high breakdown voltage is also due to the high-κ LaAlO3 dielectric to give larger physical thickness at the same equivalent oxide thickness (EOT). The good reliability and full process compatibility are the other important merits for Ytterbium/LaAlO3 device.

关键词： Ytterbium LaAlO3 LTPS Threshold Voltage EOT

作者: B. F. Hung C. H. Wu Albert Chin S. J. Wang J. W. Lin I. J. Hsieh

作者单位: Dept. of Electronics Eng., Natl Chiao Tung Univ.,Nano Sci. Tech. Center, Univ. System of Taiwan, Hs lnst. of Microelectronics, Dept. of EE, Natl Cheng Kung Univ.,Tainan, Taiwan, China Dept. of Electronics Eng., Chung Hua University, Hsinchu, Taiwan, China

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 1190-1193

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）