Study of the Fabrication of ZnO-TFT

摘要：

Znic Oxide ( ZnO) as a shorter wavelength luminescent material concerning its outstanding properties of a wide band-gap semiconductor, it can be used as the active channel layer to fabricate thin film transistor (TFT) and transparent thin film transistor(TTFT), In this paper, we introduced ZnO-TFT using different substrate material, insulator material, electrode material of gate, source and drain in its device.

关键词： ZnO Film Thin Film Transistor Fabrication

作者: Chao Wang X.T. Yang H.C. Zhu X.M. Ma G.Z. Fu H Jing Y.C. Chang G.T. Du

作者单位: Jinlin Institute of Architecture Technology Jinlin Institute of Architecture Technology;Changchun Institute of Optics Fine Mechanics and Physics Jilin University, China Changchun Institute of Optics Fine Mechanics and Physics

会议类型: 国际会议

会议名称: 2007亚洲显示国际会议（AD07）

会议地点: 上海

会议语种:英文

页码: 1194-1195

在线出版日期: 2007-03-12（万方平台首次上网日期，不代表论文的发表时间）